16nm functional 0.039&amp;#x00B5;m&lt;sup&gt;2&lt;/sup&gt; 6T-SRAM cell with nano injection lithography, nanowire channel, and full TiN gate

Hou-Yu Chen; Chun-Chi Chen; Fu-Kuo Hsueh; Jan-Tsai Liu; Chih-Yen Shen; Chiung-Chih Hsu; Shyi-Long Shy; Bih-Tiao Lin; Hsi-Ta Chuang; Cheng-San Wu; Chenming Hu; Chien-Chao Huang; Fu-Liang Yang

16nm functional 0.039µm<sup>2</sup> 6T-SRAM cell with nano injection lithography, nanowire channel, and full TiN gate

2009 IEEE International Electron Devices Meeting (IEDM) (2009) - Comments
doi: 10.1109/iedm.2009.5424252

Hou-Yu Chen, Chun-Chi Chen, Fu-Kuo Hsueh, Jan-Tsai Liu, Chih-Yen Shen, Chiung-Chih Hsu, Shyi-Long Shy, Bih-Tiao Lin, Hsi-Ta Chuang, Cheng-San Wu, Chenming Hu, Chien-Chao Huang, Fu-Liang Yang