Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology
2015 IEEE International Electron Devices Meeting (IEDM) (2015) - Comments
doi: 10.1109/iedm.2015.7409701 

Yao-Jen Lee, Fu-Ju Hou, Shang-Shiun Chuang, Fu-Kuo Hsueh, Kuo-Hsing Kao, Po-Jung Sung, Wei-You Yuan, Jay-Yi Yao, Yu-Chi Lu, Kun-Lin Lin, Chien-Ting Wu, Hisu-Chih Chen, Bo-Yuan Chen, Guo-Wei Huang, Henry J. H. Chen, Jiun-Yun Li, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Tseung-Yuen Tseng